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2SA1358-Z Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SA1358-Z Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() isc website: www.iscsemi.com isc & iscsemi is registered trademark 2 isc Silicon PNP Power Transistor 2SA1358-Z ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA ; IB= 0 -120 V V(BR)EBO Emitter-Base Breakdown Voltage IE= -1mA ; IC= 0 -5 V VCE(sat) Collector-Emitter Saturation Voltage IC= -500mA; IB= -50mA -1.0 V VBE(on) Base-Emitter On Voltage IC= -500mA ; VCE= -5V -1.0 V ICBO Collector Cutoff Current VCB= -120V; IE= 0 -0.1 μ A IEBO Emitter Cutoff Current VEB= -5V; IC= 0 -0.1 μ A hFE DC Current Gain IC= -0.1A ; VCE= -5V 80 240 fT Current-Gain—Bandwidth Product IC= -0.1A ; VCE= -5V 120 MHz COB Output Capacitance IE= 0; VCB= -10V, ftest= 1MHz 30 pF hFE Classifications O Y 80-160 120-240 |
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