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2SA1358-Z Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2SA1358-Z Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  isc website： www.iscsemi.com isc & iscsemi is registered trademark 1 isc Silicon PNP Power Transistor 2SA1358-Z DESCRIPTION · With TO-252(DPAK) packaging · Excellent linearity of hFE · Low collector-to-emitter saturation voltage · Fast switching speed · Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · Designed for audio frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -1 A IB Base Current-Continuous -0.1 A PC Collector Power Dissipation @ TC=25℃ 10 W Collector Power Dissipation @ Ta=25℃ 1.5 TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ |
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