IXSA 10N60B2D1

IXSP 10N60B2D1

IXYS MOSFETs and IGBTs are covered by

4,835,592

4,881,106

5,017,508

5,049,961

5,187,117

5,381,025

6,162,665

6,306,728 B1 6,534,343

6,683,344

one or moreof the following U.S. patents:

4,850,072

4,931,844

5,034,796

5,063,307

5,237,481

5,486,715

6,259,123B1 6,404,065B1 6,583,505

6,710,405B2

IXYS reserves the right to change limits, test conditions, and dimensions.

Fig. 20. Peak reverse current I

RM

versus -di

Fig. 19. Reverse recovery charge Q

r

versus -di

Fig. 18. Forward current I

Fig. 21. Dynamic parameters Q

versus T

VJ

Fig. 22. Recovery time t

Fig. 23. Peak forward voltage V

t

Fig. 24. Transient thermal resistance junction-to-case

Constants for Z

iR

t

1

1.449

0.0052

2

0.5578

0.0003

3

0.4931

0.0169

NOTE: Fig. 19 to Fig. 23 shows typical values

200

600

1000

0400

800

40

60

80

100

0.00001

0.0001

0.001

0.01

0.1

1

0.001

0.01

0.1

1

10

040

80

120

160

0.0

0.5

1.0

1.5

2.0

K

f

T

VJ

C

-di

t

s

K/W

0

200

400

600

800 1000

0

20

40

60

0.0

0.1

0.2

0.3

V

FR

di

V

200

600

1000

0400

800

0

2

4

6

8

10

100

1000

0

50

100

150

200

250

0123

0

5

10

15

20

25

30

I

RM

Q

r

I

F

A

V

F

-di

-di

A/

µs

A

V

nC

A/

µs

A/

µs

t

rr

ns

t

fr

Z

thJC

A/

µs

µs

T

T

T

I

RM

Q

r

V

FR

T

V

T

V

T

V

DSEP 8-06B

t

fr

I

5 A

I

I

I

5 A

I

I

I

5 A

I

I

T

I