eGaN® FET DATASHEET

EPC2021

EPC – THE LEADER IN GaN TECHNOLOGY | WWW.EPC-CO.COM | COPYRIGHT 2019 |

| 1

EPC2021 eGaN® FETs are supplied only in

passivated die form with solder bumps.

Die Size: 6.05 mm x 2.3 mm

• High Speed DC-DC Conversion

• Motor Drive

• Industrial Automation

• Synchronous Rectification

• Inrush Protection

• Class-D Audio

EFFICIENT POWER CONVERSION

G

D

S

HAL

EPC2021 – Enhancement Mode Power Transistor

Maximum Ratings

PARAMETER

VALUE

UNIT

Drain-to-Source Voltage (Continuous)

80

V

Drain-to-Source Voltage (up to 10,000 5 ms pulses at 150°C)

96

90

A

420

Gate-to-Source Voltage

6

V

Gate-to-Source Voltage

-4

Operating Temperature

-40 to 150

°C

-40 to 150

Thermal Characteristics

PARAMETER

TYP

UNIT

Thermal Resistance, Junction-to-Case

0.4

°C/W

Thermal Resistance, Junction-to-Board

1.1

Thermal Resistance, Junction-to-Ambient (Note 1)

42

See http://epc-co.com/epc/documents/product-training/Appnote_Thermal_Performance_of_eGaN_FETs.pdf for details.

All measurements were done with substrate connected to source.

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Drain-to-Source Voltage

80

V

Drain-Source Leakage

0.1

0.7

mA

Gate-to-Source Forward Leakage

1

9

mA

Gate-to-Source Reverse Leakage

0.1

0.7

mA

Gate Threshold Voltage

0.8

1.4

2.5

V

Drain-Source On Resistance

1.8

2.5

mΩ

Source-Drain Forward Voltage

1.6

V

Gallium Nitride’s exceptionally high electron mobility and low temperature coefficient allows very

and low on-time are beneficial as well as those where on-state losses dominate.