BC856BMB datasheet(5/12 Pages) NEXPERIA

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BC856BMB

60 V, 100 mA PNP general-purpose transistor

BC856BMB

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Product data sheet

19 August 2015

5 / 12

10. Characteristics

Table 7.

Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VCB = -30 V; IE = 0 A; Tamb = 25 °C

-15

ICBO

collector-base cut-off

current

VCB = -30 V; IE = 0 A; Tj = 150 °C

-5

µA

IEBO

emitter-base cut-off

current

VEB = -5 V; IC = 0 A; Tamb = 25 °C

-100

hFE

DC current gain

VCE = -5 V; IC = -2 mA; Tamb = 25 °C

220

475

IC = -10 mA; IB = -0.5 mA; Tamb = 25 °C

-200

VCEsat

collector-emitter

saturation voltage

IC = -100 mA; IB = -5 mA; pulsed;

tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C

-400

IC = -10 mA; IB = -0.5 mA; Tamb = 25 °C

-700

VBEsat

base-emitter saturation

voltage

IC = -100 mA; IB = -5 mA; Tamb = 25 °C

-850

VCE = -5 V; IC = -2 mA; Tamb = 25 °C

-600

-750

VBE

base-emitter voltage

VCE = -5 V; IC = -10 mA; Tamb = 25 °C

-820

collector capacitance

VCB = -10 V; IE = 0 A; ie = 0 A;

f = 1 MHz; Tamb = 25 °C

2.5

emitter capacitance

VEB = -0.5 V; IC = 0 A; ic = 0 A;

f = 1 MHz; Tamb = 25 °C

4.5

transition frequency

VCE = -5 V; IC = -10 mA; f = 100 MHz;

Tamb = 25 °C

100

MHz

noise figure

VCE = -5 V; IC = -200 µA; RS = 2 kΩ;

f = 1 kHz; B = 200 Hz; Tamb = 25 °C

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