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PBSS4360PAS Datasheet(PDF) 13 Page - Nexperia B.V. All rights reserved |
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PBSS4360PAS Datasheet(HTML) 13 Page - Nexperia B.V. All rights reserved |
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13 / 19 page  NXP Semiconductors PBSS4360PAS 60 V, 3 A NPN low VCEsat (BISS) transistor PBSS4360PAS All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved Product data sheet 16 October 2015 12 / 18 11. Test information 006aaa003 IBon (100 %) IB input pulse (idealized waveform) IBoff 90 % 10 % IC (100 %) IC td ton 90 % 10 % tr output pulse (idealized waveform) tf t ts toff Fig. 16. BISS transistor switching time definition RC R2 R1 DUT mlb826 Vo RB (probe) 450 Ω (probe) 450 Ω oscilloscope oscilloscope VBB VI VCC Fig. 17. Test circuit for switching times 11.1 Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. |
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