PSMN2R4-30MLD datasheet(2/13 Pages) NEXPERIA

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Nexperia

PSMN2R4-30MLD

N-channel 30 V, 2.4 mΩ logic level MOSFET in LFPAK33 using

NextPowerS3 Technology

PSMN2R4-30MLD

All information provided in this document is subject to legal disclaimers.

Product data sheet

11 August 2015

2 / 13

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

junction temperature

-55

175

°C

Static characteristics

VGS = 4.5 V; ID = 25 A; Tj = 25 °C;

Fig. 10

2.6

3.2

mΩ

RDSon

drain-source on-state

resistance

VGS = 10 V; ID = 25 A; Tj = 25 °C;

Fig. 10

2.4

mΩ

Dynamic characteristics

QGD

gate-drain charge

VGS = 4.5 V; ID = 25 A; VDS = 15 V;

Fig. 12; Fig. 13

5.6

8.4

QG(tot)

total gate charge

VGS = 4.5 V; ID = 25 A; VDS = 15 V;

Fig. 12; Fig. 13

Source-drain diode

softness factor

IS = 25 A; VGS = 0 V; dIS/dt = -100 A/µs;

VDS = 15 V; Fig. 16

0.97

[1] Continuous current is limited by package

5. Pinning information

Table 2.

Pinning information

Symbol Description

Simplified outline

Graphic symbol

source

gate

mounting base; connected to

drain

LFPAK33 (SOT1210)

mbb076

6. Ordering information

Table 3.

Ordering information

Package

Type number

Name

Description

Version

PSMN2R4-30MLD

LFPAK33

Plastic single ended surface mounted package

(LFPAK33); 8 leads

SOT1210

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