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PJM84BPSA Datasheet(PDF) 1 Page - Dongguan Pingjingsemi Technology Co., Ltd, |
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PJM84BPSA Datasheet(HTML) 1 Page - Dongguan Pingjingsemi Technology Co., Ltd, |
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1 / 6 page  PJM84BPSA P-Channel MOSFET 1 / 6 ⚫ Energy efficient ⚫ Low threshold voltage ⚫ High-speed switching ⚫ ESD protected(HBM) up to 1KV Absolute Maximum Ratings Ratings at TC=25℃ unless otherwise specified. Parameter Symbol Maximum Units Drain-Source Voltage -VDS 60 V Gate-Source Voltage VGS ±20 V Continuous Drain Current -ID 0.17 A Pulsed Drain Current Note1 -IDM 0.68 Power Dissipation PD 900 mW Junction and Storage Temperature Range TJ, TSTG 150, -55 to 150 °C Thermal Characteristics Parameter Symbol Typ. Units Maximum Junction-to-Ambient Note2 RθJA 139 °C/W Feature D S G SOT-23 1. Gate 2.Source 3.Drain Marking: P84B Schematic Diagram www.pingjingsemi.com Revision：1.1 Jan-2019 |
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