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PJM84BPSA Datasheet(PDF) 2 Page - Dongguan Pingjingsemi Technology Co., Ltd,

Part # PJM84BPSA
Description  P-Channel MOSFET
PDF  6 Pages
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Manufacturer  PJSEMI [Dongguan Pingjingsemi Technology Co., Ltd,]
Direct Link  http://www.pingjingsemi.com/MainEn/Main.aspx
Logo PJSEMI - Dongguan Pingjingsemi Technology Co., Ltd,

PJM84BPSA Datasheet(HTML) 2 Page - Dongguan Pingjingsemi Technology Co., Ltd,

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PJM84BPSA
P-Channel MOSFET
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Units
Static Parameters
Drain-Source Breakdown Voltage
-BVDSS -ID=250µA, VGS=0V
60
--
--
V
Zero Gate Voltage Drain Current
-IDSS
-VDS=60V, VGS=0V
--
--
1
µA
Gate-Body Leakage Current
IGSS
VDS=0V, VGS=±20V
--
1
5
µA
Gate Threshold Voltage Note3
-VGS(th) VDS=VGS, -ID=250µA
1
--
2
V
Static Drain-Source On-Resistance
Note3
RDS(ON)
-VGS=10V, -ID=0.17A
--
6.5
Ω
-VGS=5V, -ID=0.14A
--
10
Ω
Dynamic Parameters
Input Capacitance
Ciss
VGS=0V, -VDS=5V, f=1MHz
--
30
--
pF
Output Capacitance
Coss
--
10
--
pF
Reverse Transfer Capacitance
Crss
--
5
--
pF
Switching Parameters
Turn-On DelayTime
tD(on)
-VDD=15V, RL=50Ω,
-ID=2.5A
--
2.5
--
ns
Turn-On Rise Time
tr
--
1
--
ns
Turn-Off DelayTime
tD(off)
--
16
--
ns
Turn-Off Fall Time
tf
--
8
--
ns
Source-Drain Diode Parameters
Diode forward current
-IS
--
--
0.17
A
Diode pulsed forward current
-ISM
--
--
0.68
A
Notes: 1. Repetitive rating : Pulse width limited by junction temperature.
2. Surface mounted on FR4 board , t≤10s.
3. Pulse Test : Pulse Width≤300μs, Duty Cycle≤2%.
Electrical Characteristics (TC = 25℃)
2 / 6
--
--
Body Diode Forward Voltage
-VSD
-IS=0.17A, VGS=0V
--
--
1.2
V
Forward Transconductance Note3
gFS
-VDS=25V, -ID=0.1A
50
--
--
mS
www.pingjingsemi.com
Revision：1.1 Jan-2019



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