STP130NS04ZB datasheet(2/12 Pages) STMICROELECTRONICS

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STP130NS04ZB - STB130NS04ZB - STW130NS04ZB

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Table 3: Absolute Maximum ratings

( ) Pulse width limited by safe operating area

Table 4: Thermal Data

(*)When mounted on 1 inch² FR4 2oZ Cu

Table 5: Avalanche Characteristics

Symbol

Parameter

Value

Unit

VDS

Drain-source Voltage (VGS = 0)

CLAMPED

VDG

Drain-gate Voltage

CLAMPED

VGS

Gate- source Voltage

CLAMPED

Drain Current (continuous) at TC = 25°C

Drain Current (continuous) at TC = 100°C

IDG

Drain Gate Current (continuous)

± 50

IGS

Gate Source Current (continuous)

± 50

IDM ( )

Drain Current (pulsed)

320

PTOT

Total Dissipation at TC = 25°C

300

Derating Factor

2.0

W/°C

VESD(G-S)

Gate-Source ESD(HBM-C=100 pF, R=1.5 K

Ω)

4KV

Tstg

Max Operating Junction Temperature

Storage Temperature

-55 to 175

°C

TO-220

D²PAK

TO-247

Unit

Rthj-case

Thermal Resistance Junction-case

Max

0.50

°C/W

Rthj-pcb (*)

Thermal Resistance Junction-pcb

Max

°C/W

Rthj-a

Thermal Resistance Junction-ambient

Max

62.5

Maximum Lead Temperature For Soldering

Purpose (1.6 mm from case, for 10 sec)

300

°C

Symbol

Parameter

Max Value

Unit

IAR

Avalanche Current, Repetitive or Not-Repetitive

(pulse width limited by Tj max)

EAS

Single Pulse Avalanche Energy

(starting Tj = 25 °C, ID = IAR, VDD = 30 V)

500

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