STW21NM50N datasheet(2/16 Pages) STMICROELECTRONICS

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Table 3: Absolute Maximum ratings

( ) Pulse width limited by safe operating area

(*) Limited only by maximum temperature allowed

(1) ISD ≤ 18 A, di/dt ≤ 400 A/µs, VDD =80% V(BR)DSS

Table 4: Thermal Data

Table 5: Avalanche Characteristics

Symbol

Parameter

Value

Unit

TO-220 / D2PAK / I2PAK

/ TO-247

TO-220FP

VDS

Drain-source Voltage (VGS = 0)

500

VDGR

Drain-gate Voltage (RGS = 20 kΩ)

500

VGS

Gate- source Voltage

±25

Drain Current (continuous) at TC = 25°C

18 (*)

Drain Current (continuous) at TC = 100°C

11 (*)

IDM ( )

Drain Current (pulsed)

72 (*)

PTOT

Total Dissipation at TC = 25°C

140

Derating Factor

1.12

0.23

W/°C

dv/dt(1)

Peak Diode Recovery voltage slope

V/ns

Viso

Insulation Winthstand Voltage (DC)

2500

Tstg

Storage Temperature

–55 to 150

150

°C

Max. Operating Junction Temperature

TO-220 / D²PAK / I²PAK

/ TO-247

TO-220FP

Rthj-case

Thermal Resistance Junction-case Max

0.89

4.21

°C/W

Rthj-amb

Thermal Resistance Junction-ambient Max

62.5

°C/W

Maximum Lead Temperature For Soldering

Purpose

300

°C

Symbol

Parameter

Max Value

Unit

IAS

Avalanche Current, Repetitive or Not-Repetitive

(pulse width limited by Tj max)

EAS

Single Pulse Avalanche Energy

(starting Tj = 25 °C, ID = IAR, VDD = 50 V)

480

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