STW21NM50N datasheet(3/16 Pages) STMICROELECTRONICS

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STP21NM50N - STF21NM50N - STB21NM50N - STB21NM50N-1 - STW21NM50N

ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)

Table 6: On/Off

(2) Characteristic value at turn off on inductive load

Table 7: Dynamic

(*) Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS

Table 8: Source Drain Diode

Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

Symbol

Parameter

Test Conditions

Value

Unit

Min.

Typ.

Max.

V(BR)DSS

Drain-source

Breakdown Voltage

ID = 1mA, VGS = 0

500

dv/dt(2)

Drain Source Voltage

Slope

Vdd=400V, Id=25A, Vgs=10V

V/ns

IDSS

Zero Gate Voltage

Drain Current (VGS = 0)

VDS = Max Rating

TC = 125 °C

µA

IGSS

Gate-body Leakage

Current (VDS = 0)

VGS = ± 20V

100

VGS(th)

Gate Threshold Voltage

VDS = VGS, ID = 250 µA

RDS(on)

Static Drain-source On

Resistance

VGS = 10V, ID = 9 A

0.150

0.190

Ω

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

gfs (1)

Forward Transconductance

VDS = 15 V, ID = 9 A

Ciss

Coss

Crss

Input Capacitance

Output Capacitance

Reverse Transfer

Capacitance

VDS = 25V, f = 1 MHz, VGS = 0

1950

420

Coss eq. (*)

Equivalent Output

Capacitance

VGS = 0V, VDS = 0V to 400V

270

td(on)

td(off)

Turn-on Delay Time

Rise Time

Off-voltageRise Time

Fall Time

VDD =250 V, ID = 9 A

RG = 4.7Ω VGS = 10 V

(see Figure 18)

Qgs

Qgd

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

VDD = 400V, ID = 18 A,

VGS = 10V,

(see Figure 21)

Gate Input Resistance

f=1MHz Gate DC Bias=0

Test Signal Level=20mV

Open Drain

1.6

Ω

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ISD

ISDM

Source-drain Current

Source-drain Current (pulsed)

VSD (1)

Forward On Voltage

ISD = 18 A, VGS = 0

1.5

trr

Qrr

IRRM

Reverse Recovery Time

Reverse Recovery Charge

Reverse Recovery Current

ISD = 18 A, di/dt = 100 A/µs

VDD = 100 V, Tj = 25°C

(see Figure 19)

360

µC

trr

Qrr

IRRM

Reverse Recovery Time

Reverse Recovery Charge

Reverse Recovery Current

ISD = 18A, di/dt = 100 A/µs

VDD = 100 V, Tj = 150°C

(see Figure 19)

640

6.5

µC

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