PJM2309PSC datasheet(2/7 Pages) PJSEMI

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PJM2309PSC

P-Channel Power MOSFET

2 / 7

Electrical Characteristics (TC=25℃ unless otherwise specified)

Parameter

Symbol

Test Condition

Min.

Typ.

Max. Units

Static Characteristics

Drain-source breakdown voltage

-V(BR)DSS

VGS = 0V, ID=-

250µA

Drain to Source Leakage Current

-IDSS

VDS =-

60V,VGS = 0V

µA

Gate-body leakage current

IGSS

VGS =±

20V, VDS = 0V

±100

Gate threshold voltage Note3

-VGS(th)

VDS =VGS, ID =-250µA

1.5

Drain-source on-resistance Note3

RDS(on)

VGS =-

10V, ID =-2A

180

mΩ

VGS =-

4.5V, ID =-1A

280

mΩ

Forward tran

sconductance Note3

gFS

VDS =-5V, ID =-

Dynamic characteristics

Input Capacitance

Ciss

VDS = -

30V,VGS = 0V,f=1MHz

850

Output Capacitance

Coss

Reverse Transfer Capacitance

Crss

Switching Characteristics

Turn-on delay time

td(on)

ID=-1A，

VDD=-30V,

VGS=-

10V，RGEN =3Ω,

RL =

7.5Ω,

Turn-on rise time

Turn-off delay time

td(off)

Turn-off fall time

Total gate charge

VDD =-

30V,VGS =-10V,ID =-2A

5.5

Gate-source charge

Qgs

2.5

Gate-drain charge

Qgd

Source-Drain Diode characteristics

Diode Forward voltage

-VDS

VGS =0V, IS=-

1.2

www.pingjingsemi.com

Revision：1.

0 Jun-2019

Notes:

Repetitive Rating: Pulse width limited by maximum junction temperature.

Surface mounted on FR4 board，t ≤ 10 sec.

Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.

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