PJM2321PSA datasheet(2/5 Pages) PJSEMI

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PJM2321PSA

P-Channel Power MOSFET

www.pingjingsemi.com

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Revision：1.0 Jun-2018

Electrical Characteristics (Ta=25℃ unless otherwise specified)

Parameter

Symbol

Test Condition

Min

Type

Max

Units

Static Characteristics

Drain-source breakdown voltage

V(BR)DSS

VGS = 0V, ID=-

250µA

-20

Drain to Source Leakage Current

IDSS

VDS =-16V,VGS = 0V

-1

µA

Gate-body leakage current

IGSS

VGS =±12V, VDS = 0V

±100

Gate threshold voltageNote3

VGS(th)

VDS =VGS, ID =-250µA

-0.4

-0.9

VGS =-4.5V, ID =-3.3A

mΩ

Drain-source on-resistance Note3

RDS(on)

VGS =-2.5V, ID =-2.8A

mΩ

VGS =-1.8V, ID =-2.3A

100

mΩ

Forward tranconductance Note3

gFS

VDS =-5V, ID =-3.3A

Dynamic characteristics

Input Capacitance

Ciss

VDS =-6V,VGS =0V,f=1MHz

715

Output Capacitance

Coss

170

Reverse Transfer Capacitance

Crss

120

Switching Characteristics

Turn-on delay time

td(on)

ID=-1A，

VDD=-6V,

VGS=-4.5V，RGEN =1Ω,

RL =6Ω,

Turn-on rise time

Turn-off delay time

td(off)

Turn-off fall time

Total gate charge

VDD =-6V,VGS =-4.5V,ID =-4.3A

Gate-source charge

Qgs

1.2

Gate-drain charge

Qgd

1.6

Source-Drain Diode characteristics

Diode Forward voltage

VDS

VGS =0V, IS=-1.6A

1.2

Notes:1. Repetitive rating: Pluse width limited by junction temperature.

2. Surface mounted on FR4 board，t ≦ 10 sec.

3. Pulse test: pulse width ≦ 300us, duty cycle≦ 0.5%.

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