HMA425U6AFR6N datasheet(3/75 Pages) HYNIX

3 / 75 page

Rev. 1.7 / Mar.2016

Description

SK hynix Unbuffered DDR4 SDRAM DIMMs (Unbuffered Double Data Rate Synchronous DRAM Dual In-Line

Memory Modules) are low power, high-speed operation memory modules that use DDR4 SDRAM devices.

These Unbuffered SDRAM DIMMs are intended for use as main memory when installed in systems such as

PCs and workstations.

Features

• Power Supply: VDD=1.2V (1.14V to 1.26V)

• VDDQ = 1.2V (1.14V to 1.26V)

• VPP - 2.5V (2.375V to 2.75V)

• VDDSPD=2.25V to 3.6V

• Functionality and operations comply with the DDR4 SDRAM datasheet

• 16 internal banks

• Bank Grouping is applied, and CAS to CAS latency (tCCD_L, tCCD_S) for the banks in the same or dif-

ferent bank group accesses are available

• Data transfer rates: PC4-2400, PC4-2133, PC4-1866, PC4-1600

• Bi-Directional Differential Data Strobe

• 8 bit pre-fetch

• Burst Length (BL) switch on-the-fly BL8 or BC4(Burst Chop)

• Supports ECC error correction and detection

• On-Die Termination (ODT)

• Temperature sensor with integrated SPD

• This product is in compliance with the RoHS directive.

• Per DRAM Addressability is supported

• Internal Vref DQ level generation is available

Ordering Information

Part Number

Density

Organization

Component Composition

# of

ranks

HMA425U6AFR6N-TF/UH

2GB

256Mx64

256Mx16(H5AN4G6NAFR)*4

HMA451U6AFR8N-TF/UH

4GB

512Mx64

512Mx8(H5AN4G8NAFR)*8

HMA451U7AFR8N-TF/UH

4GB

512Mx72

512Mx8(H5AN4G8NAFR)*9

HMA41GU6AFR8N-TF/UH

8GB

1Gx64

512Mx8(H5AN4G8NAFR)*16

HMA41GU7AFR8N-TF/UH

8GB

1Gx72

512Mx8(H5AN4G8NAFR)*18

HMA425U6AFR6N Datasheet(PDF) 3 Page - Hynix Semiconductor

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