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I8N80 Datasheet(PDF) 1 Page - Jiangsu Donghai Semiconductor Technology Co.,Ltd |
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I8N80 Datasheet(HTML) 1 Page - Jiangsu Donghai Semiconductor Technology Co.,Ltd |
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1 / 10 page  ROUM Semiconductor Technology CO.,LTD. Rev. 1.0 www.roum.cn Page 1 of 10 8N80 1 Description These silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. Thetransistor can be used in various power switching circuit forsystem miniaturization and higher efficiency.Which accords with the RoHS standard. 2 Features ● Low Gate Charge ● ESD Improved ● Fast Switching ● Low ON Resistance ● 100% Single Pulse Avalanche Energy Test ● 100% Δ VDS Test 3 Applications ● Electronic Ballast ● ATX Power ● High Voltage H Bridge PWM Motor Drive 8A 800V N-channel Enhancement Mode Power MOSFET 4 Electrical Characteristics 4.1 Absolute Maximum Rating(Tc=25℃,unless otherwise noted) PARAMETER SYMBOL VALUE UNIT Drian-Source Voltage VDS 800 V Gate-Drain Voltage VGS ±30 V Drain Current(continuous) ID（T=25℃） （T=100℃） 8 A 5.4 A Drain Current(Pulsed) (Note 1) IDM 32 A Single Pulse Avalanche Energy (Note 5) EAS 350 mJ Avalanche Energy Repetitive (Note 1) EAR 55 mJ Avalanche Current (Note 1) IAR 3.3 A Peak Diode Recovery dv/dt (Note 6) dv/dt 5 V/ns Total Dissipation Ta=25℃ Ptot 2 W TC=25℃ Ptot 120 W Junction Temperature Tj 150 ℃ storage Temperature Tstg -55～150 ℃ Maximum Temperature for soldering TL 300 ℃ 4.2 Thermal Characteristics PARAMETER SYMBOL VALUE UNIT Thermal Resistance Junction to Case-sink RthJC 1.04 ℃/W Thermal Resistance Junction to Ambient RthJA 62.5 ℃/W VDSS = 800V RDS(on) （TYP)= 1.1Ω ID = 8A TO-220C 1 2 3 4 5 6 7 8 A B C D 8 7 6 5 4 3 2 1 D C B A Ti t le N u m b er R ev i s io n Si ze D D ate: 1 0 -A p r-2 0 1 7 Sh eet o f Fi l e: D :\ Pr og ram Fi l es \p ro tel 99 s e\文件夹\ W X D H D raw n B y : 3 1 2 G S D |
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