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I8N80 Datasheet(PDF) 2 Page - Jiangsu Donghai Semiconductor Technology Co.,Ltd

Part # I8N80
Description  8A 800V N-channel Enhancement Mode Power MOSFET
PDF  10 Pages
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Manufacturer  WXDH [Jiangsu Donghai Semiconductor Technology Co.,Ltd]
Direct Link  http://www.jswxdh.cn
Logo WXDH - Jiangsu Donghai Semiconductor Technology Co.,Ltd

I8N80 Datasheet(HTML) 2 Page - Jiangsu Donghai Semiconductor Technology Co.,Ltd

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ROUM Semiconductor Technology CO.,LTD.
Rev. 1.0
www.roum.cn
Page 2 of 10
8N80
4.3 Electrical Characteristics(Tc=25℃,unless otherwise noted)
PARAMETER
SYMBOL
Test Condition
VALUE
UNIT
MIN
TYP
MAX
Off Characteristics
Drain-source
Breakdown Voltage
BVDSS
ID=250μA,VGS=0V
800
--
--
V
Drain-to-Source
Leakage Current
IDSS
VDS=800V,VGS=0V,TC=25℃
--
--
25
μA
VDS=640V,VGS=0V,TC=125℃
--
--
250
μA
Gate-to-Source
Forward Leakage
IGSSF
VGS=+20V, VDS=0V
--
--
10
nA
Gate-to-Source
Reverse Leakage
IGSSR
VGS=﹣20V, VDS=0V
--
--
-10
nA
On Characteristics
(Note 3)
Gate threshold voltage
VGS(th)
VDS=VGS,ID=250μA
2
--
4
V
Drain-source on Resist
ance
RDS(on)
VGS=10V,ID=4A
--
1.1
1.25
Ω
Dynamic Characteristics
(Note 4)
Forward Transfer
conductance
gfs
VDS=15V,ID=4A
--
8.5
--
S
Input Capacitance
Ciss
VGS=0V,VDS=25V,f=1.0MHz
--
2100
--
pF
Output Capacitance
Coss
--
152
--
Reverse Transfer Cap
acitance
Crss
--
12
--
Switching Characteristics
(note4)
Turn-on Delay Time
td(on)
ID=8A,
VDD=400V,
VGS=10V,
RG=4.7Ω
--
40
--
nS
Turn-on Rise Time
tr
--
120
--
nS
Turn-off Delay Time
td(off)
--
70
--
nS
Turn-off Fall Time
tf
--
80
--
nS
Total Gate Charge
Qg
ID=8A,VDD=640V,VGS=10V
--
47
--
nC
Gate-to-Source Charge
Qgs
--
10
--
Gate-to-
Drain(“Miller”)C
harge
Qgd
--
17
--
Drain-Source Diode Characteristics
Diode Forward Voltage
(Note 3)
VFSD
VGS=0V,IS=8A
--
--
1.5
V
Diode Forward Current
(Note 2)
IS
--
--
8
A
Reverse Recovery Time
trr
TJ=25℃,IF=8A,
dIF/dt=100A/μS,VGS=0V
--
303
--
nS
Reverse Recovery
Charge
Qrr
--
2230
--
nC
Notes：
1: Repetitive rating, pulse width limited by maximum junction temperature.
2: Surface mounted on FR4 Board, t≤10sec.
3: Pulse width ≤ 300μs, duty cycle ≤ 2%.
4: Guaranteed by design, not subject to production.
5. L=20mH,ID=5.9A,VDD=50V,VGATE=800V,Start TJ=25℃.
6. ISD=8A,di/dt≤100A/μs,VDD≤BVDSS, Start TJ=25℃.



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