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WSF6012 Datasheet(PDF) 3 Page - Shenzhen Guan Hua Wei Ye Co., Ltd |
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WSF6012 Datasheet(HTML) 3 Page - Shenzhen Guan Hua Wei Ye Co., Ltd |
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3 / 8 page  Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=-250uA -60 --- --- V △ BVDSS/△TJ BVDSS Temperature Coefficient Reference to 25℃ , ID=-1mA --- -0.03 --- V/℃ VGS=-10V , ID=- 5A --- 46 60 RDS(ON) Static Drain-Source On-Resistance 2 VGS=-4.5V , ID=- 3A --- 65 90 m Ω VGS(th) Gate Threshold Voltage -1. 0 --- -2.5 V △ VGS(th) VGS(th) Temperature Coefficient VGS=VDS , ID =-250uA --- 4.56 --- mV/℃ VDS=-48V , VGS=0V , TJ=25℃ --- --- 1 IDSS Drain-Source Leakage Current VDS=-48V , VGS=0V , TJ=55℃ --- --- 5 uA IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ± 100 nA gfs Forward Transconductance VDS=-5V , ID=- 4.5A --- 15 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 1.5 2 .7 Ω Qg Total Gate Charge (-4.5V) --- 10 --- Qgs Gate-Source Charge --- 3.1 --- Qgd Gate-Drain Charge VDS=-48V , VGS=- 4.5V , ID=-5A --- 3.0 --- nC Td(on) Turn-On Delay Time --- 9.7 --- Tr Rise Time --- 19 --- Td(off) Turn-Off Delay Time --- 46 --- Tf Fall Time VDD=- 20V , VGS=-10V , RG= 3.3Ω, ID=-1A, --- 45.8 --- ns Ciss Input Capacitance --- 500 --- Coss Output Capacitance --- 66 --- Crss Reverse Transfer Capacitance VDS=-15V , VGS=0V , f=1MHz --- 32 --- pF Symbol Parameter Conditions Min. Typ. Max. Unit EAS Single Pulse Avalanche Energy 5 VDD=-25V , L=0.1mH , IAS=- 10A 90 --- --- mJ Symbol Parameter Conditions Min. Typ. Max. Unit IS Continuous Source Current 1,6 --- --- - 15 A ISM Pulsed Source Current 2,6 VG=VD=0V , Force Current --- --- - 50 A VSD Diode Forward Voltage 2 VGS=0V , IS=-1A , TJ=25℃ --- --- -1. 2 V Note : 1.The data tested by surface mounted on a 1 inch 2 FR-4 board with 2OZ copper,t<10sec. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The EAS data shows Max. rating . The test condition is VDD=-25V,VGS=-10V,L=0.1mH,IAS=- 10A 4.The power dissipation is limited by 150℃ junction temperature 5.The Min. value is 100% EAS tested guarantee. 6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. P-Channel Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Guaranteed Avalanche Characteristics Diode Characteristics WSF6012 N&P-Channel MOSFET Page 3 www.winsok.tw Dec.2014 |
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