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WSF6012 Datasheet(PDF) 2 Page - Shenzhen Guan Hua Wei Ye Co., Ltd |
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WSF6012 Datasheet(HTML) 2 Page - Shenzhen Guan Hua Wei Ye Co., Ltd |
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2 / 8 page  Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA 60 --- --- V △ BVDSS/△TJ BVDSS Temperature Coefficient Reference to 25℃ , ID=1mA --- 0.063 --- V/℃ VGS=10V , ID= 8A --- 28 37 RDS(ON) Static Drain-Source On-Resistance 2 VGS=4.5V , ID= 5A --- 37 45 m Ω VGS(th) Gate Threshold Voltage 1 --- 2.5 V △ VGS(th) VGS(th) Temperature Coefficient VGS=VDS , ID =250uA --- -5.24 --- mV/℃ VDS=48V , VGS=0V , TJ=25℃ --- --- 1 IDSS Drain-Source Leakage Current VDS=48V , VGS=0V , TJ=55℃ --- --- 5 uA IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ± 100 nA gfs Forward Transconductance VDS=5V , ID=8A --- 21 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 3.0 4.5 Ω Qg Total Gate Charge (4.5V) --- 12.6 20 Qgs Gate-Source Charge --- 3.5 --- Qgd Gate-Drain Charge VDS=48V , VGS=4.5V , ID= 8A --- 6.3 --- nC Td(on) Turn-On Delay Time --- 8 --- Tr Rise Time --- 14.2 --- Td(off) Turn-Off Delay Time --- 24.6 --- Tf Fall Time VDD=30V , VGS= 4.5V , RG= 3.3Ω, ID=1A --- 4.6 --- ns Ciss Input Capacitance --- 670 --- Coss Output Capacitance --- 70 --- Crss Reverse Transfer Capacitance VDS=15V , VGS=0V , f=1MHz --- 35 --- pF Symbol Parameter Conditions Min. Typ. Max. Unit EAS Single Pulse Avalanche Energy 5 VDD=25V , L=0.1mH , IAS= 16A 1 00 --- --- mJ Symbol Parameter Conditions Min. Typ. Max. Unit IS Continuous Source Current 1,6 --- --- 20 A ISM Pulsed Source Current 2,6 VG=VD=0V , Force Current --- --- 60 A VSD Diode Forward Voltage 2 VGS=0V , IS=1 .7A,TJ=25℃ --- --- 1. 4 V Note : 1.The data tested by surface mounted on a 1 inch 2 FR-4 board with 2OZ copper,t<10sec. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS= 16A 4.The power dissipation is limited by 150℃ junction temperature 5.The Min. value is 100% EAS tested guarantee. 6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. N-Channel Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Guaranteed Avalanche Characteristics Diode Characteristics WSF6012 N&P-Channel MOSFET Page 2 www.winsok.tw Dec.2014 |
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