STM32F722IC datasheet(136/229 Pages) STMICROELECTRONICS

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Electrical characteristics

STM32F722xx STM32F723xx

136/229

DS11853 Rev 6

6.3.10

Internal clock source characteristics

The parameters given in Table 42 and Table 43 are derived from tests performed under

ambient temperature and VDD supply voltage conditions summarized in Table 16.

High-speed internal (HSI) RC oscillator

Figure 41. ACCHSI versus temperature

1. Guaranteed by characterization results.

Table 42. HSI oscillator characteristics (1)

1. VDD = 3.3 V, TA = –40 to 105 °C unless otherwise specified.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

fHSI

Frequency

MHz

ACCHSI

HSI user trimming step(2)

2. Guaranteed by design.

Accuracy of the HSI oscillator

TA = –40 to 105 °C(3)

3. Guaranteed by characterization results.

− 8-4.5

TA = –10 to 85 °C(3)

− 4-

TA = 25 °C(4)

4. Factory calibrated, parts not soldered.

− 1-

tsu(HSI)(2) HSI oscillator startup time

2.2

µs

IDD(HSI)(2) HSI oscillator power consumption

µA

MSv41055V1

-8

-6

-4

-2

-40

105

125

TA (°C)

Min

Max

Typical

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