STM32F722IC datasheet(182/229 Pages) STMICROELECTRONICS

182 / 229 page

Electrical characteristics

STM32F722xx STM32F723xx

182/229

DS11853 Rev 6

Table 97. Asynchronous multiplexed PSRAM/NOR read timings(1)

1. Guaranteed by characterization results.

Symbol

Parameter

Min

Max

Unit

tw(NE)

FMC_NE low time

3Thclk -1

3Thclk +1

tv(NOE_NE)

FMC_NEx low to FMC_NOE low

2Thclk

2Thclk +0.5

ttw(NOE)

FMC_NOE low time

Thclk -1

Thclk +1

th(NE_NOE)

FMC_NOE high to FMC_NE high hold time

tv(A_NE)

FMC_NEx low to FMC_A valid

0.5

tv(NADV_NE)

FMC_NEx low to FMC_NADV low

0.5

tw(NADV)

FMC_NADV low time

Thclk -0.5

Thclk +1

th(AD_NADV)

FMC_AD(address) valid hold time after

FMC_NADV high)

Thclk +0.5

th(A_NOE)

Address hold time after FMC_NOE high

Thclk -0.5

th(BL_NOE)

FMC_BL time after FMC_NOE high

tv(BL_NE)

FMC_NEx low to FMC_BL valid

0.5

tsu(Data_NE)

Data to FMC_NEx high setup time

Thclk -1.5

tsu(Data_NOE)

Data to FMC_NOE high setup time

Thclk -1.5

th(Data_NE)

Data hold time after FMC_NEx high

th(Data_NOE)

Data hold time after FMC_NOE high

Table 98. Asynchronous multiplexed PSRAM/NOR read-NWAIT timings(1)

1. Guaranteed by characterization results.

Symbol

Parameter

Min

Max

Unit

tw(NE)

FMC_NE low time

8Thclk -1

8Thclk +1

tw(NOE)

FMC_NWE low time

5Thclk -1.5

8Thclk +0.5

tsu(NWAIT_NE)

FMC_NWAIT valid before FMC_NEx high

5Thclk +1.5

th(NE_NWAIT)

FMC_NEx hold time after FMC_NWAIT

invalid

4Thclk +1

STM32F722IC Datasheet(PDF) 182 Page - STMicroelectronics

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