TC6320 datasheet(5/14 Pages) MICROCHIP

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P-CHANNEL ELECTRICAL CHARACTERISTICS

Electrical Specifications: TA = TJ = 25°C unless otherwise specified.

Parameter

Sym.

Min.

Typ.

Max.

Unit

Conditions

DC PARAMETER (Note 1 unless otherwise specified)

Drain-to-source Breakdown Voltage

BVDSS

–200

—

VGS = 0V, ID = –2 mA

Gate Threshold Voltage

VGS(th)

–1

—

–2.4

VGS = VDS, ID = –1 mA

Change in VGS(th) with Temperature

∆VGS(th)

—

4.5

mV/°C VGS = VDS, ID = –1 mA (Note 2)

Gate-to-source Shunt Resistor

RGS

—

kΩ

IGS = 100 µA

Gate-to-Source Zener Voltage

VZGS

13.2

—

IGS = –2 mA

Zero-gate Voltage Drain Current

IDSS

—

–10

µA

VDS = Maximum rating, 

VGS = 0V

—

–1

VDS = 0.8 Maximum rating,

VGS = 0V, TA = 125°C (Note 2)

On-state Drain Current

ID(ON)

–1

—

VGS = –4.5V, VDS = –25V

–2

—

VGS = –10V, VDS = –25V

Static Drain-to-source On-state



Resistance

RDS(ON)

—

Ω

VGS = –4.5V, ID = –150 mA

—

VGS = –10V, ID = –1A

Change in RDS(ON) with Temperature ∆RDS(ON)

—

%/°C

VGS = –10V, ID = –200 mA (Note 2)

AC PARAMETER (Note 2)

Forward Transconductance

GFS

400

—

mmho VDS = –25V, ID = –500 mA

Input Capacitance

CISS

—

200

VGS = 0V,

VDS = –25V,

f = 1 MHz

Common Source Output

Capacitance

COSS

—

Reverse Transfer Capacitance

CRSS

—

Turn-on Delay Time

td(ON)

—

VDD = –25V,

ID = –1A,

RGEN = 25Ω

Rise Time

—

Turn-off Delay Time

td(OFF)

—

Fall Time

—

DIODE PARAMETER

Diode Forward Voltage Drop

VSD

—

–1.8

VGS = 0V, ISD = –500 mA (Note 1)

Reverse Recovery Time

trr

—

300

—

VGS = 0V, ISD = –500 mA (Note 2)

Note 1: All DC parameters are 100% tested at 25°C unless otherwise stated. Pulse test: 300 µs pulse, 2% duty

cycle.

2: Specification is obtained by characterization and is not 100% tested.

TEMPERATURE SPECIFICATIONS

Electrical Characteristics: Unless otherwise specified, for all specifications TA =TJ = +25°C.

Parameter

Sym.

Min.

Typ.

Max.

Unit

Conditions

TEMPERATURE RANGE

Operating Ambient Temperature

–55°C

—

+150

°C

Storage Temperature

–55°C

—

+150

°C

PACKAGE THERMAL RESISTANCE

8-lead DFN

JA

—

°C/W

Note 1

8-lead SOIC

JA

—

101

—

°C/W

Note 1

 2017 Microchip Technology Inc.

DS20005697A-page 5

TC6320

Note 1: 1 oz., four-layer, 3” x 4” PCB

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