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TC6320 Datasheet(PDF) 1 Page - Microchip Technology |
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TC6320 Datasheet(HTML) 1 Page - Microchip Technology |
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1 / 14 page  2017 Microchip Technology Inc. DS20005697A-page 1 TC6320 Features • Integrated Gate-to-source Resistor • Integrated Gate-to-source Zener Diode • Low Threshold • Low On-resistance • Low Input Capacitance • Fast Switching Speeds • Free from Secondary Breakdown • Low Input and Output Leakage • Independent Electrically Isolated N-channel and P-channel Applications • High-voltage Pulsers • Amplifiers •Buffers • Piezoelectric Transducer Drivers • General Purpose Line Drivers • Logic-level Interfaces General Description The TC6320 consists of high-voltage, low-threshold N-channel and P-channel MOSFETs in 8-lead SOIC and DFN packages. Both MOSFETs have integrated gate-to-source resistors and gate-to-source Zener diode clamps which are desired for high-voltage pulser applications. It is a complimentary, high-speed, high-voltage, gate-clamped N-channel and P-channel MOSFET pair, which utilizes an advanced vertical DMOS structure and a well-proven silicon gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally induced secondary breakdown. Microchip’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance and fast switching speeds are desired. Package Type 8-lead SOIC (Top view) See Table 2-1 and Table 2-2 for pin information. 8 7 6 5 1 2 3 4 SN GN SP GP DN DN DP DP 5-lead DFN (Top view) 8 7 6 5 1 2 3 4 SN GN GP SP DN DN DP DP DN DP s N-Channel and P-Channel Enhancement-Mode MOSFET Pair |
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