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P1820HDB Datasheet(PDF) 1 Page - Wuxi U-NIKC Semiconductor CO.,LTD |
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P1820HDB Datasheet(HTML) 1 Page - Wuxi U-NIKC Semiconductor CO.,LTD |
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1 / 8 page  P1820HDB N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) THERMAL RESISTANCE RATINGS UNITS 1Pulse width limited by maximum junction temperature. Drain-Source Voltage VDS 200 MAXIMUM ±20 18 V IDM Pulsed Drain Current 1 VGS TYPICAL 83 9 12 ID LIMITS °C -55 to 150 mJ W UNITS 30 A 72 33 SYMBOL Avalanche Current IAS Junction-to-Ambient Junction & Storage Temperature Range Power Dissipation EAS Avalanche Energy L = 1mH RDS(ON) TC = 100 °C PARAMETERS/TEST CONDITIONS Gate-Source Voltage 157mΩ @V GS = 10V 18A ID 200V Continuous Drain Current TC = 25 °C PD TJ, TSTG TC = 25 °C TC = 100 °C RqJC RqJA 1.5 62.5 THERMAL RESISTANCE °C / W Junction-to-Case SYMBOL REV 1.0 1 2016/2/29 |
Similar Part No. - P1820HDB |
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Similar Description - P1820HDB |
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