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P1820HDB Datasheet(PDF) 2 Page - Wuxi U-NIKC Semiconductor CO.,LTD

Part # P1820HDB
Description  N-Channel Enhancement Mode MOSFET
PDF  8 Pages
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Manufacturer  UNIKC [Wuxi U-NIKC Semiconductor CO.,LTD]
Direct Link  http://www.unikc.com.cn/
Logo UNIKC - Wuxi U-NIKC Semiconductor CO.,LTD

P1820HDB Datasheet(HTML) 2 Page - Wuxi U-NIKC Semiconductor CO.,LTD

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P1820HDB
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
MIN
TYP
MAX
200
1
2
3
±100
nA
1
10
148
188
131
157
21
S
780
132
16
24
12
3
8
20
135
176
128
18
A
1
V
122
nS
0.67
uC
1Pulse test : Pulse Width
 300 msec, Duty Cycle  2％.
2Independent of operating temperature.
Drain-Source Breakdown
Voltage
Gate Threshold Voltage
DYNAMIC
V
mA
VGS = 0V, ID = 250mA
V(BR)DSS
Drain-Source On-State
Resistance
1
RDS(ON)
VGS = 4.5V, ID = 9A
mΩ
Crss
VDS = 160V, VGS = 0V , TJ = 125 °C
VDS = VGS, ID = 250mA
VDS = 0V, VGS = ±20V
VGS = 10V, ID = 9A
VDS = 10V, ID = 9A
VGS(th)
Forward Transconductance
1
gfs
Zero Gate Voltage Drain Current
Gate-Body Leakage
IGSS
pF
Ciss
Coss
Output Capacitance
VDS = 200V, VGS = 0V
IDSS
Qg(VGS = 10V)
VDS = 160V, ID = 18A
Qgd
Qgs
Qg(VGS = 4.5V)
Qrr
Diode Reverse Recovery Charge
Continuous Current
Turn-On Delay Time
2
Rise Time
2
nC
Total Gate Charge
2
IF = 18A, VGS = 0V
trr
Gate-Drain Charge
2
Input Capacitance
IS
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Fall Time
2
PARAMETER
SYMBOL
TEST CONDITIONS
Turn-Off Delay Time
2
Gate-Source Charge
2
Reverse Transfer Capacitance
VGS = 0V, VDS = 25V, f = 1MHz
STATIC
LIMITS
UNITS
Forward Voltage
1
Diode Reverse Recovery Time
IF = 18A, dl/dt = 100A / mS
nS
VDS = 100V,ID @ 18A,
VGS = 10V, RGEN = 25Ω
td(on)
tr
td(off)
tf
VSD
REV 1.0
2
2016/2/29



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