 |
Electronic Components Datasheet Search |
|
|
Electronic Components Datasheet Search |
|
PD600BA Datasheet(PDF) 1 Page - Wuxi U-NIKC Semiconductor CO.,LTD |
|
|
|||||||||||||||||||||||||||||
PD600BA Datasheet(HTML) 1 Page - Wuxi U-NIKC Semiconductor CO.,LTD |
|
|
1 / 8 page  PD600BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) THERMAL RESISTANCE RATINGS UNITS 1Pulse width limited by maximum junction temperature. 2Package limitation current is 28A V VGS TC= 25 °C Avalanche Current 3.8 Avalanche Energy L=0.1mH Power Dissipation Tj, Tstg V UNITS 30 ±20 32 42 °C -55 to 150 MAXIMUM 120 26 20 mJ 13 A Junction-to-Ambient IDM LIMITS VDS SYMBOL W TYPICAL PD ID TC= 25 °C 30V Continuous Drain Current 2 TC= 100 °C PARAMETERS/TEST CONDITIONS RDS(ON) 9.5mΩ @V GS = 10V 42A Drain-Source Voltage 20 EAS THERMAL RESISTANCE TC= 100°C Junction & Storage Temperature Range SYMBOL Gate-Source Voltage ID IAS Pulsed Drain Current 1 °C / W RqJA 62.5 Junction-to-Case RqJC REV 1.0 1 2015/12/4 |
Similar Part No. - PD600BA |
|
Similar Description - PD600BA |
|
|
|
Link URL |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link to Datasheet | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
New Zealand ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
