STM32G031F6 datasheet(63/117 Pages) STMICROELECTRONICS

63 / 117 page

DS12992 Rev 2

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STM32G031x4/x6/x8

Electrical characteristics

Note:

For information on selecting the crystal, refer to the application note AN2867 “Oscillator

design guide for ST microcontrollers” available from the ST website www.st.com.

Figure 19. Typical application with a 32.768 kHz crystal

Note:

An external resistor is not required between OSC32_IN and OSC32_OUT and it is forbidden

to add one.

5.3.8

Internal clock source characteristics

The parameters given in Table 41 are derived from tests performed under ambient

temperature and supply voltage conditions summarized in Table 21: General operating

conditions. The provided curves are characterization results, not tested in production.

High-speed internal (HSI16) RC oscillator

tSU(LSE) is the startup time measured from the moment it is enabled (by software) to a stabilized 32.768 kHz oscillation is

reached. This value is measured for a standard crystal and it can vary significantly with the crystal manufacturer

MS30253V2

OSC32_IN

OSC32_OUT

Drive

programmable

amplifier

fLSE

32.768 kHz

resonator

Resonator with integrated

capacitors

CL1

CL2

Table 41. HSI16 oscillator characteristics(1)

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

fHSI16

HSI16 Frequency

VDD=3.0 V, TA=30 °C

15.88

16.08

MHz

∆Temp(HSI16)

HSI16 oscillator frequency drift over

temperature

TA= 0 to 85 °C

-1

TA= -40 to 125 °C

-2

1.5

∆VDD(HSI16)

HSI16 oscillator frequency drift over

VDD

VDD=1.62 V to 3.6 V

-0.1

0.05

TRIM

HSI16 frequency user trimming step

From code 127 to 128

-8

-6

-4

From code 63 to 64

From code 191 to 192

-5.8

-3.8

-1.8

For all other code

increments

0.2

0.3

0.4

DHSI16(2)

Duty Cycle

tsu(HSI16)(2)

HSI16 oscillator start-up time

0.8

1.2

μs

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