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CEP84A4 Datasheet(PDF) 2 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

Part # CEP84A4
Description  N-Channel MOSFET uses advanced trench technology
PDF  5 Pages
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Manufacturer  DOINGTER [SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.]
Direct Link  http://www.doingter.cn/
Logo DOINGTER - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

CEP84A4 Datasheet(HTML) 2 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

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—
2 —
Symbol
Parameter
Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Dra i n-Sourtce Breakdown Voltage
VGS=0V,ID=250μA
40
45
---
V
IDSS
Zero Ga te Voltage Drain Current
VGS=0V, VDS=40V
---
---
1
μA
IGSS
Ga te-Source Leakage Current
VGS=±20V, VDS=0A
---
---
±100
nA
On Characteristics
VGS(th)
GATE-Source Threshold Vol tage
VGS=VDS, ID=250μA
1.2
1.9
2.5
V
RDS(ON)
Dra i n-Source On Resistance
2
VGS=10V,ID=20A
---
3.2
4
mΩ
VGS=4.5V,ID=10A
---
5.5
7
GFS
Forwa rd Tra nsconductance
VDS=10V, ID=20A
26
---
---
S
Dynamic Characteristics
Ciss
Input Ca pacitance
VDS=20V, VGS=0V, f=1MHz
---
5400
---
pF
Coss
Output Ca pacitance
---
970
---
Crss
Reverse Tra nsfer Ca pacitance
---
380
---
Switching Characteristics
td(on)
Turn-On Delay Ti me
VDD=20V, ID=2A,
RGEN=3Ω.VGS=10V
---
15
---
ns
tr
Ri s e Time
---
18
---
ns
td(off)
Turn-Off Delay Ti me
---
52
---
ns
tf
Fa ll Ti me
---
23
---
ns
Qg
Tota l Gate Charge
VGS=10V, VDS=20V,
ID=20A
---
75
---
nC
Qgs
Ga te-Source Cha rge
---
10.5
---
nC
Qgd
Ga te-Drain “Miller” Charge
---
17
---
nC
Drain-Source Diode Characteristics
VSD
Source-Drain Diode Forward Voltage
2
VGS=0V,IS=40A
---
---
1.2
V
CEP84A4
Electrical Characteristics：(T
C=25℃
unless otherwise noted)



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