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STM32L552CCT3PTR Datasheet(PDF) 228 Page - STMicroelectronics |
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STM32L552CCT3PTR Datasheet(HTML) 228 Page - STMicroelectronics |
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228 / 340 page ![]() Electrical characteristics STM32L552xx 228/340 DS12737 Rev 6 Prequalification trials Most of the common failures (unexpected reset and program counter corruption) can be reproduced by manually forcing a low state on the NRST pin or the Oscillator pins for 1 second. To complete these trials, ESD stress can be applied directly on the device, over the range of specification values. When unexpected behavior is detected, the software can be hardened to prevent unrecoverable errors occurring (see application note AN1015). Electromagnetic Interference (EMI) The electromagnetic field emitted by the device are monitored while a simple application is executed (toggling 2 LEDs through the I/O ports). This emission test is compliant with IEC 61967-2 standard which specifies the test board and the pin loading. 5.3.13 Electrical sensitivity characteristics Based on three different tests (ESD, LU) using specific measurement methods, the device is stressed in order to determine its performance in terms of electrical sensitivity. Electrostatic discharge (ESD) Electrostatic discharges (a positive then a negative pulse separated by 1 second) are applied to the pins of each sample according to each pin combination. The sample size depends on the number of supply pins in the device (3 parts × (n+1) supply pins). This test conforms to the ANSI/JEDEC standard. Table 98. EMI characteristics Symbol Parameter Conditions Monitored frequency band Max vs [fHSE/fHCLK] Unit 8 MHz / 110 MHz SEMI Peak level VDD = 3.6 V, TA = 25°C, LQFP144 package compliant with IEC 61967-2 0.1 MHz to 30 MHz 4 dBμV 30 MHz to 130 MHz 0 130 MHz to 1 GHz 16 1 GHz to 2 GHz 11 EMI Level 3.5 - Table 99. ESD absolute maximum ratings Symbol Ratings Conditions Class Maximum value(1) Unit VESD(HBM) Electrostatic discharge voltage (human body model) TA = +25 °C, conforming to ANSI/ESDA/JEDEC JS-001 2 2000 V VESD(CDM) Electrostatic discharge voltage (charge device model) TA = +25 °C, conforming to ANSI/ESDA/JEDEC JS-002 LQFP144, LQFP100, WLCSP81 C1 250 Other packages C2a 500 1. Guaranteed by characterization results. |
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