IRFS640 datasheet(1/5 Pages) DOINGTER

Part #	IRFS640

Description	N-Channel MOSFET uses advanced trench technology

PDF	5 Pages

Scroll/Zoom	100%

Manufacturer	DOINGTER [SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.]

Direct Link	http://www.doingter.cn/

Logo

1 / 5 page

www.doingter.cn

—

1 —

Description：

This N-Channel MOSFET uses advanced trench technology and

design to provide excellent RDS(on) with low gate charge.

It can be used in a wide variety of applications.

Features：

1) VDS=200V,ID=18A,RDS(ON)<1.8Ω@VGS=10V

2) Low gate charge.

3) Green device available.

4) Advanced high cell denity trench technology for ultra Iow RDS(ON).

5) Excellent package for good heat dissipation.

Absolute Maximum Ratings：(TC=25℃ unless otherwise noted)

Symbol

Parameter

Ratings

Units

VDS

Drain-Source Voltage

200

V

VGS

Gate-Source Voltage

±

30

V

ID

Continuous Drain Current- TC=25℃

18

A

Continuous Drain Current-TC=100℃

11.9

EAS

Single Pulse Avalanche Energy(Note1)

250

mJ

IAR

Avalanche Current (Note2)

18

A

PD

Power Dissipation

139

W

TJ, TSTG

Operating and Storage Junction Temperature Range

-55 to +150

℃

TL

Maximum lead temperature for soldering purpose,1/8”

from case for 5 seconds

300

℃

Thermal Characteristics：

Symbol

Parameter

Max

Units

RƟJC

Thermal Resistance,Junction to Case

3.1

℃

/W

D S

G

IRFS640

Similar Part No. - IRFS640

Manufacturer	Part #	Datasheet	Description
Fairchild Semiconductor	IRFS640	916Kb / 10P	200V N-Channel MOSFET
Samsung semiconductor	IRFS640	308Kb / 5P	Improved inductive ruggedness
Foshan Blue Rocket Elec...	IRFS640	814Kb / 6P	N-CHANNEL MOSFET in a TO-220F Plastic Package
List of Unclassifed Man...	IRFS640	2Mb / 31P	SEMICONDUCTORS
Inchange Semiconductor ...	IRFS640	318Kb / 2P	isc N-Channel MOSFET Transistor

More results

Similar Description - IRFS640

Manufacturer	Part #	Datasheet	Description
SHENZHEN DOINGTER SEMIC...	AM20N06-90D	800Kb / 5P	N-Channel MOSFET uses advanced trench technology
	AM20N10-115D	4Mb / 4P	N-Channel MOSFET uses advanced trench technology
	AM40N20-180P	1Mb / 5P	N-Channel MOSFET uses advanced trench technology
	AM50N03-12D	1Mb / 4P	N-Channel MOSFET uses advanced trench technology
	AM50N06-15D	2Mb / 5P	N-Channel MOSFET uses advanced trench technology
	AM70N04-06D	1Mb / 4P	N-Channel MOSFET uses advanced trench technology
	AM70N15-40P	1Mb / 5P	N-Channel MOSFET uses advanced trench technology
	AM90N04-03P	1Mb / 5P	N-Channel MOSFET uses advanced trench technology
	AM4492N	1Mb / 4P	N-Channel MOSFET uses advanced trench technology
	AM4910N	1Mb / 4P	N-Channel MOSFET uses advanced trench technology

More results

IRFS640 Datasheet(PDF) 1 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

IRFS640 Datasheet(HTML) 1 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

Similar Part No. - IRFS640

Similar Description - IRFS640

Html Pages

1 2 3 4 5

Datasheet Download

Link URL