F0452C datasheet(11/24 Pages) RENESAS

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F0452C Datasheet

May 5, 2020

Table 6.

Electrical Characteristics – RX Path in RX Mode Cascaded Performance and TX Performance

See the F0452C Application Circuit. Specifications apply when operated as an RX RF amplifier with VDD = +3.3V, fRF = 2.6GHz, TEPAD = +25°C,

STBYx = Low, RX output power = -10dBm, ZS = ZL = 50Ω, and EVKit trace and connector losses are de-embedded unless otherwise noted.

Parameter

Symbol

Condition

Minimum

Typical

Maximum

Units

Output Third-Order Intercept Point

OIP31

Pout = 0dBm/tone

5MHz tone separation

23[a]

dBm

OIP32

Pout = 0dBm/tone

5MHz tone separation

TEPAD = -40°C to 105°C

OIP33

Pout = 0dBm/tone

5MHz tone separation

Low Gain Mode

OIP34

Pout = 0dBm/tone

5MHz tone separation

Low Gain Mode

TEPAD = -40°C to 105°C

Output 1dB Compression

OP1dB1

High Gain Mode [b]

dBm

OP1dB2

High Gain Mode

TEPAD = -40°C to 105°C

OP1dB3

Low Gain Mode

OP1dB4

Low Gain Mode

TEPAD = -40°C to 105°C

Channel Isolation

ISOCH

RFISO1 =

��1_��

��2_��

��

with -60 ≤ SW1_IN ≤ -30dBm

RFISO2 =

��2_��

��1_��

��

with -60 ≤ SW2_IN ≤ -30dBm

RF Switch Isolation

ISOSW

TX Mode

Measured at SW_IN to

RX_OUT of the same channel

[a] Items in the “Minimum”/“Maximum” columns in bold italics are guaranteed by test. Items in the “Minimum”/“Maximum” columns not in bold italics

are guaranteed by design characterization.

[b] In the OP1dB calculation formula, “G” denotes the gain of each part instance at the frequency of interest and appropriate HIGH / LOW gain state.

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