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6NM65L-TN3-R Datasheet(PDF) 3 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

Part # 6NM65L-TN3-R
Description  N-Channel MOSFET uses advanced trench technology
PDF  7 Pages
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Manufacturer  DOINGTER [SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.]
Direct Link  http://www.doingter.cn/
Logo DOINGTER - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

6NM65L-TN3-R Datasheet(HTML) 3 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

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—
3 —
Qgs
Gate-Source
Charge
ID=5A
---
1.6
nC
Qgd
Gate-Drain “Miller” Charge
---
4
nC
Drain-Source Diode Characteristics
VSD
Source-Drain Diode Forward Voltage
VGS=0V,IS=1A
---
---
1
V
ISDM
Continuous Source Current
---
15
A
ISD
Pulsed Source Current
---
5
A
trr
Reverse Recovery Time
14
---
Ns
qrr
Reverse Recovery Charge
5
---
nc
IMM
15
A
Notes:
Typical Characteristics： (T
C=25℃ unless otherwise noted)
---
RG
f = 1 MHz open drain
Intrinsic gate resistance
2.5
Ω
1.Repetitive Rating: Pulse width limited by maximum junction temperature
2. Tj=25℃,VDD=50V,VG=10V, RG=25Ω
Figure1. Safe operating area
Figure2. Source-Drain Diode Forward Voltage
Figure3. Output characteristics
Figure4. Transfer characteristics
6NM65L-TN3-R



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