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12P10G-S08-R Datasheet(PDF) 1 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. |
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12P10G-S08-R Datasheet(HTML) 1 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. |
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1 / 4 page  www.doingter.cn — 1 — Description： This P-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features： 1) VDS=-100V,ID=-1.8A,RDS(ON)<200mΩ@VGS=-10V 2) Low gate charge. 3) Green device available. 4) Advanced high cell denity trench technology for ultra Iow RDS(ON). 5) Excellent package for good heat dissipation. Absolute Maximum Ratings：(TC=25℃ unless otherwise noted) Symbol Parameter Ratings Units VDS Drain-Source Voltage -100 V VGS Gate-Source Voltage ± 20 V ID Continuous Drain Current-(TA=25℃) -1.8 A Continuous Drain Current-(TA=70℃) -1.4 Pulsed Drain Current1 -7.2 A PD Power Dissipation-(TA=25℃) 2 W Power Dissipation -Derate above 25℃ 0.016 W/℃ TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 ℃ Thermal Characteristics： Symbol Parameter Max Units RƟJA Thermal Resistance,Junction to Ambient 62.5 ℃ / W G D D D D S S S 12P10G-S08-R |
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