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JCS50N06RH-O-R-N-B Datasheet(PDF) 1 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. |
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JCS50N06RH-O-R-N-B Datasheet(HTML) 1 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. |
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1 / 4 page  www.doingter.cn — 1 — Description： This N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features： 1) VDS=60V,ID=50A,RDS(ON)<17mΩ@VGS=10V 2) Low gate charge. 3) Green device available. 4) Advanced high cell denity trench technology for ultra RDS(ON). 5) Excellent package for good heat dissipation. Absolute Maximum Ratings：(T C=25℃ unless otherwise noted) Symbol Parameter Ratings Units VDS Drain-Source Voltage 60 V VGS Gate-Source Voltage ±20 V ID Continuous Drain Current-TC=25℃ 50 A Continuous Drain Current-TC=100℃ 33 IDM Pulsed Drain Current 1 200 EAS Single Pulse Avalanche Energy 2 64 mJ PD Power Dissipation, TC=25℃ 89 W TJ, TSTG Operating and Storage Junction Temperature Range -55 to +175 ℃ D S G JCS50N06RH-O-R-N-B |
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