JCS730R-O-R-N-A datasheet(4/5 Pages) DOINGTER

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Figure 5. Capacitance Characteristics

Figure 6. Gate Charge Characteristics

-1

200

400

600

800

1000

1200

iss = Cgs + Cgd (Cds = shorted)

oss = Cds + Cgd

rss = Cgd

※ Note;

1. V

GS = 0 V

2. f = 1 MHz

rss

oss

iss

DS, Drain-Source Voltage [V]

DS = 200V

DS = 80V

DS = 320V

※ Note : I

D = 6A

G, Total Gate Charge [nC]

-2

-1

100 ms

1 ms

µs

10 ms

100

µs

Operation in This Area

is Limited by R

DS(on)

※ Notes :

1. T

= 25

2. T

J = 150

3. Single Pulse

DS, Drain-Source Voltage [V]

Figure 9-1. Maximum Safe Operating Area

Figure 10. Maximum Drain Current

vs Case Temperature

Figure 7. Breakdown Voltage Variation

vs Temperature

Figure 8. On-Resistance Variation

vs Temperature

-100

-50

100

150

200

0.8

0.9

1.0

1.1

1.2

※Notes:

1. V

GS = 0 V

2. I

D = 250

μ A

, Junction Temperature [

-100

-50

100

150

200

0.0

0.5

1.0

1.5

2.0

2.5

3.0

※ Notes :

1. V

GS = 10 V

2. I

D = 3 A

J, Junction Temperature [

100

125

150

C, Case Temperature [

℃]

JCS730R-O-R-N-A

JCS730R-O-R-N-A Datasheet(PDF) 4 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

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