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LM0804A Datasheet(PDF) 1 Page - Shanghai Leiditech Electronic Technology Co., Ltd

Part # LM0804A
Description  N-Channel Enhancement Mode Field Effect Transistor
PDF  5 Pages
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Manufacturer  LEIDITECH [Shanghai Leiditech Electronic Technology Co., Ltd]
Direct Link  http://www.leiditech.com
Logo LEIDITECH - Shanghai Leiditech Electronic Technology Co., Ltd

LM0804A Datasheet(HTML) 1 Page - Shanghai Leiditech Electronic Technology Co., Ltd

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General Description
These N-Channel enhancement mode power field
effect transistors are using trench DMOS technology.
This advanced technology has been especially tailored
to minimize on-state resistance, provide superior
switching performance, and withstand high energy
pulse in the avalanche and commutation mode. These
devices are well suited for high efficiency fast switching
applications.
Features
VDS
80V
ID
(at VGS=10V)
1
00A
RDS(ON) (at VGS=10V)
3.2mΩ(Typ)
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Maximum
Units
Drain-Source Voltage
VDS
80
V
Gate-Source Voltage
VGS
+20/-12
V
Drain Current-Continuous
TC=25°C
I
D
1
00
A
TC=100°C
I
D
63
A
Maximum Power Dissipation
P
D
1
42
W
Single pulse avalanche energy(1)
EAS
540
mJ
Junction and Storage Temperature Range
T
J,TSTG
-55 To 150
℃
Thermal Characteristics
Parameter
Symbol
Typ
Max
Unit
Thermal Resistance junction-case
R
θJc
1.1
℃
/W
Thermal Resistance unction-to-Ambient
R
θJA
62
℃
/W
D
G
S
PDFN5x6
D
SG
S
S
DD
D
Enhancement Mode Field Effect Transistor
N-Channel
LM0804A
Rev :
www.leiditech.com
01.06.2018
1/5


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