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HM20N60 Datasheet(PDF) 3 Page - Shenzhen Huazhimei Semiconductor Co., Ltd

Part # HM20N60
Description  the silicon N-channel Enhanced VDMOSFETs
PDF  10 Pages
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Manufacturer  HMSEMI [Shenzhen Huazhimei Semiconductor Co., Ltd]
Direct Link  http://www.hmsemi.com/
Logo HMSEMI - Shenzhen Huazhimei Semiconductor Co., Ltd

HM20N60 Datasheet(HTML) 3 Page - Shenzhen Huazhimei Semiconductor Co., Ltd

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Source-Drain Diode Characteristics
Rating
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
IS
Continuous Source Current (Body Diode)
--
--
20
A
ISM
Maximum Pulsed Current (Body Diode)
--
--
80
A
VSD
Diode Forward Voltage
IS=20A,VGS=0V
--
--
1.5
V
trr
Reverse Recovery Time
--
400
--
ns
Qrr
Reverse Recovery Charge
IS=20A,Tj = 25°C
dIF/dt=100A/us,
VGS=0V
--
4.5
--
µ
C
Pulse width tp≤380µs,δ≤2%
Symbol
Parameter
Typ.
Units
RθJC
Junction-to-Case
0.5
℃
/W
RθJA
Junction-to-Ambient
62
℃
/W
a1：Repetitive rating; pulse width limited by maximum junction temperature
a2：L=10mH, ID=15.5A, Start TJ=25℃
a3：ISD =20A,di/dt ≤200A/us,VDD≤BVDSS, Start TJ=25℃
20N60



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