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STS2DNF30L Datasheet(PDF) 2 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

Part # STS2DNF30L
Description  Dual N-Channel MOSFET uses advanced trench technology
PDF  4 Pages
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Manufacturer  DOINGTER [SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.]
Direct Link  http://www.doingter.cn/
Logo DOINGTER - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

STS2DNF30L Datasheet(HTML) 2 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

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Electrical Characteristics：(T
C=25℃ unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain-Sourtce Breakdown Voltage
VGS=0V,ID=250μA
30
---
---
V
IDSS
Zero Gate Voltage Drain Current
VGS=0V, VDS=24V
---
---
1
μA
IGSS
Gate-Source Leakage Current
VGS=±12V, VDS=0A
---
---
±100
nA
On Characteristics
3
VGS(th)
GATE-Source Threshold Voltage
VGS=VDS, ID=250μA
0.65
---
1.3
V
RDS(ON)
Drain-Source On Resistance
VGS=10V,ID=6.9A
---
24
32
mΩ
VGS=4.5V,ID=5A
---
27
36
GFS
Forward Transconductance
VDS=5V, ID=5A
---
9
---
S
Dynamic Characteristics
4
Ciss
Input Capacitance
VDS=15V, VGS=0V, f=1MHz
---
600
---
pF
Coss
Output Capacitance
---
95
---
Crss
Reverse Transfer Capacitance
---
68
---
Rg
VDS=0V, VGS=0V, f=1MHz
---
3
---
Ω
Switching Characteristics
4
td(on)
Turn-On Delay Time
VDS=15V, RL =2.1Ω
RGEN=3Ω. VGS=10V,
---
4.6
---
ns
tr
Rise Time
---
4.1
---
ns
td(off)
Turn-Off Delay Time
---
20.6
---
ns
tf
Fall Time
---
5.2
---
ns
Qg
Total Gate Charge
VGS=10V, VDS=15V,
ID=6.9A
---
13.84
---
nC
Qgs
Gate-Source
Charge
---
1.82
---
nC
Qgd
Gate-Drain “Miller” Charge
---
3.2
---
nC
Drain-Source Diode Characteristics
VSD
Source-Drain Diode Forward Voltage
VGS=0V,IS=1A
---
0.76
1
V
Gate resistance
STS2DNF30L



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