Electronic Components Datasheet Search
  New Zealand  ▼
ALLDATASHEET.CO.NZ

X  

Preview PDF HTML

SWK4441 Datasheet(PDF) 2 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

Part # SWK4441
Description  P-Channel MOSFET uses advanced trench technology
PDF  4 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  DOINGTER [SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.]
Direct Link  http://www.doingter.cn/
Logo DOINGTER - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

SWK4441 Datasheet(HTML) 2 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

  SWK4441 Datasheet HTML 1Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. SWK4441 Datasheet HTML 2Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. SWK4441 Datasheet HTML 3Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. SWK4441 Datasheet HTML 4Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.  
Zoom Inzoom in Zoom Outzoom out
 2 / 4 page
background image
www.doingter.cn
—
2 —
Electrical Characteristics：(T
C=25℃ unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain-Sourtce Breakdown Voltage
VGS=0V,ID=250μA
-60
---
---
V
IDSS
Zero Gate Voltage Drain Current
VGS=0V, VDS=-60V, TJ=25℃
---
---
-1
μA
IGSS
Gate-Source Leakage Current
VGS=±20V, VDS=0A
---
---
±100
nA
On Characteristics
VGS(th)
GATE-Source Threshold Voltage
VGS=VDS, ID=250μA
-1.0
-1.6
-2.5
V
RDS(ON)
Drain-Source On Resistance
2
VGS=-10V,ID=-3A
---
87
105
mΩ
VGS=-4.5V,ID=-2A
---
120
145
GFS
Forward Transconductance
VDS=-10V, ID=-3A
---
5.5
---
S
Dynamic Characteristics
Ciss
Input Capacitance
VDS=-30V, VGS=0V, f=1MHz
---
785
1300
pF
Coss
Output Capacitance
---
175
300
Crss
Reverse Transfer Capacitance
---
112
220
Switching Characteristics
td(on)
Turn-On Delay Time
2,3
VDS=-30V, VGS=-10V
ID=-1A,RGEN=6Ω
---
8
16
ns
tr
Rise Time
2,3
---
15.4
30
ns
td(off)
Turn-Off Delay Time
2,3
---
42.8
80
ns
tf
Fall Time
2,3
---
8.4
16
ns
Qg
Total Gate Charge
2,3
VDS=-30V , VGS=-4.5V ,
ID=-2A
---
10
15
nC
Qgs
Gate-Source
Charge
2,3
---
1.6
3.2
nC
Qgd
Gate-Drain “Miller” Charge
2,3
---
3
6
nC
Drain-Source Diode Characteristics
VSD
Source-Drain Diode Forward Voltage
2
VGS=0V,IS=-1A, TJ=25℃
---
---
-1
V
SWK4441



Html Pages

1 2 3 4


Datasheet Download

Go To PDF Page


Link URL



Does ALLDATASHEET help your business so far?  [ DONATE ] 

About Alldatasheet   |   Advertisement   |   Contact us   |   Privacy Policy   |   Link to Datasheet    |   Link Exchange   |   Manufacturer List
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com