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SWK4450 Datasheet(PDF) 1 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. |
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SWK4450 Datasheet(HTML) 1 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. |
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1 / 4 page  www.doingter.cn — 1 — Description： This N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features： 1) VDS=40V,ID=6.7A,RDS(ON)<32mΩ@VGS=10V 2) Low gate charge. 3) Green device available. 4) Advanced high cell denity trench technology for ultra RDS(ON). 5) Excellent package for good heat dissipation. Absolute Maximum Ratings：(T C=25℃ unless otherwise noted) Symbol Parameter Ratings Units VDS Drain-Source Voltage 40 V VGS Gate-Source Voltage ±20 V ID Drain Current – Continuous (TC=25℃ ) 6.7 A Drain Current – Continuous (TC=100℃ ) 4.3 IDM Drain Current – Pulsed 1 26.8 PD Power Dissipation (TC=25℃ ) 2.5 W Power Dissipation – Derate above 25℃ 0.02 TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 ℃ Thermal Characteristics： Symbol Parameter Max Units RƟJC Thermal Resistance,Junction to Case 50 ℃/W RƟJA Thermal Resistance,Junction to Ambient 62 G D D D D S1 S S SWK4450 |
Similar Part No. - SWK4450 |
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Similar Description - SWK4450 |
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