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UNA10R180HL-TN3-R Datasheet(PDF) 2 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

Part # UNA10R180HL-TN3-R
Description  N-Channel MOSFET uses advanced SGT technology
PDF  5 Pages
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Manufacturer  DOINGTER [SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.]
Direct Link  http://www.doingter.cn/
Logo DOINGTER - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

UNA10R180HL-TN3-R Datasheet(HTML) 2 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

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Electrical Characteristics：(T
C=25℃ unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Ma
x
Units
Off Characteristics
BVDSS
Drain-Sourtce Breakdown Voltage
VGS=0V,ID=250μA
100
---
---
V
IDSS
Zero Gate Voltage Drain Current
VGS=0V, VDS=60V
---
---
1
μA
IGSS
Gate-Source Leakage Current
VGS=±20V, VDS=0A
---
---
±
100
nA
On Characteristics
VGS(th)
GATE-Source Threshold Voltage
VGS=VDS, ID=250μA
1.5
---
2.5
V
RDS(ON)
Drain-Source On Resistance
VGS=10V,ID=20A
---
9
12
mΩ
VGS=4.5V,ID=10A
---
12
14
Rg
5.5
---
Ω
Dynamic Characteristics
Ciss
Input Capacitance
VDS=50V, VGS=0V, f=1MHz
---
1998.1
---
pF
Coss
Output Capacitance
---
321.7
---
Crss
Reverse Transfer Capacitance
---
7.1
---
Switching Characteristics
td(on)
Turn-On Delay Time
VDD=50V, ID=25A,
VGS=10V,RGEN=2Ω
---
22.1
---
ns
tr
Rise Time
---
5.2
---
ns
td(off)
Turn-Off Delay Time
---
44
---
ns
tf
Fall Time
---
8.4
---
ns
Qg
Total Gate Charge
VGS=10V, VDS=50V,
ID=25A
---
28.9
---
nC
Qgs
Gate-Source Charge
---
6
---
3.7
---
nC
Gate resistance
f= 1 MHz, Open drain
Vplateau
Gate plateau voltage
UNA10R180HL-TN3-R



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