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UP9972L-TN3-R Datasheet(PDF) 3 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

Part # UP9972L-TN3-R
Description  N-Channel MOSFET uses advanced trench technology
PDF  4 Pages
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Manufacturer  DOINGTER [SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.]
Direct Link  http://www.doingter.cn/
Logo DOINGTER - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

UP9972L-TN3-R Datasheet(HTML) 3 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

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3 —
Typical Characteristics： (T
C=25℃ unless otherwise noted)
Notes:1. Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature
2. EAS condition : TJ=25℃,VDD=30V,VG=10V,L=0.5mH,Rg=25 ,IAS=16A
3. Pulse Test: Pulse Width≤300μs, Duty Cycle≤0.5%
0
1
2
3
4
5
0
40
FIGURE1:OUTPUT CHARACTERISTICS
VDS(V)
0
1.5
3.0
4.5
6.0
7.5
0
5
10
20
30
VGS (V)
FIGURE 2: TYPICAL TRANSFER CHARACTERISTICS
ID (A)
ID (A)
0
10
20
30
40
4
8
20
FIGURE 3:ON-RESISTANCE VS. DRAIN CURRENT
R DS(ON)
ID(A)
0
10
20
30
40
50
60
0
6
FIGURE 5:GATE CHARGE CHARACTERISTICS
0.0
0.2
0.4
0.6
0.8
1.0
FIGURE 4: BODY DIODE CHARACTERISTICS
IS(A)
VSD(V)
FIGURE 6:CAPACITANCE CHARACTERISTICS
15
2
4
8
10
QG(NC)
VGS (V)
125℃
TJ=125℃
VGS =3V
12
16
24
25℃
TJ=25℃
0
30
20
10
4V
4.5V
10V
25
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
0
5
10
15
20
25
VDS(V)
COSS
CRSS
CISS
3500
0
3000
2500
2000
1500
1000
500
VGS=4.5V
VGS=10V
VDS=30V
ID=30A
UP9972L-TN3-R



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