G3R75MT12D

1200 V 75 mΩ SiC MOSFET

TM

Reverse Diode Characteristics

Parameter

Symbol

Conditions

Values

Unit

Note

Min.

Typ.

Max.

Diode Forward Voltage

V

V = -5 V, I = 10 A

4.9

V

Fig. 17-18

V = -5 V, I = 10 A, T = 175°C

4.4

Continuous Diode Forward Current

I

V = -5 V, T = 100°C

16

A

Diode Pulse Current

I

V = -5 V, Note 1

64

A

Reverse Recovery Time

t

V = -5 V, I = 20 A, V = 800 V

dif/dt = 1200 A/µs, T = 25°C

15

ns

Reverse Recovery Charge

Q

64

nC

Peak Reverse Recovery Current

I

4

A

Reverse Recovery Time

t

V = -5 V, I = 20 A, V = 800 V

dif/dt = 1200 A/µs, T = 175°C

23

ns

Reverse Recovery Charge

Q

160

nC

Peak Reverse Recovery Current

I

7

A

SD

GS

SD

GS

SD

j

S

GS

c

S(pulse)

GS

rr

GS

SD

R

j

rr

rrm

rr

GS

SD

R

j

rr

rrm

Rev 21/May

Latest Version at: www.genesicsemi.com/sic-mosfet/G3R75MT12D/G3R75MT12D.pdf

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