UT4446G-S08-R datasheet(1/4 Pages) DOINGTER

Part #	UT4446G-S08-R

Description	N-Channel MOSFET uses advanced trench technology

PDF	4 Pages

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Manufacturer	DOINGTER [SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.]

Direct Link	http://www.doingter.cn/

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Description：

This N-Channel MOSFET uses advanced trench technology and

design to provide excellent RDS(on) with low gate charge.

It can be used in a wide variety of applications.

Features：

1) VDS=30V,ID=10A,RDS(ON)<13mΩ@VGS=10V

2) Low gate charge.

3) Green device available.

4) Advanced high cell denity trench technology for ultra RDS(ON).

5) Excellent package for good heat dissipation.

Absolute Maximum Ratings：(T

C=25℃ unless otherwise noted)

Symbol

Parameter

Ratings

Units

VDS

Drain-Source Voltage

30

V

VGS

Gate-Source Voltage

±20

V

ID

Drain Current – Continuous (TC=25℃ )

10

A

Drain Current – Continuous (TC=100℃ )

6

IDM

Drain Current – Pulsed

50

PD

Power Dissipation (TC=25℃ )

2.5

W

TJ, TSTG

Operating and Storage Junction Temperature Range

-55 to +150

℃

Thermal Characteristics：

Symbol

Parameter

Max

Units

RƟJA

Thermal Resistance,Junction to Ambient

2

50

G

D

S1

S

UT4446G-S08-R

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UT4446G-S08-R Datasheet(PDF) 1 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

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