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UTD454L-TN3-R Datasheet(PDF) 2 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

Part # UTD454L-TN3-R
Description  N-Channel MOSFET uses advanced trench technology
PDF  4 Pages
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Manufacturer  DOINGTER [SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.]
Direct Link  http://www.doingter.cn/
Logo DOINGTER - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

UTD454L-TN3-R Datasheet(HTML) 2 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

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Electrical Characteristics：(T
C=25℃ unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain-Sourtce Breakdown Voltage
VGS=0V,ID=250μA
40
---
---
V
IDSS
Zero Gate Voltage Drain Current
VGS=0V, VDS=40V, TJ=25℃
---
---
1
μA
IGSS
Gate-Source Leakage Current
VGS=±20V, VDS=0A
---
---
±100
nA
On Characteristics
VGS(th)
GATE-Source Threshold Voltage
VGS=VDS, ID=250μA
1.2
1.6
2.5
V
RDS(ON)
Drain-Source On Resistance
VGS=10V,ID=12A
---
25
30
mΩ
VGS=4.5V,ID=10A
---
32
40
GFS
Forward Transconductance
VDS=10V, ID=3A
---
9
---
S
Dynamic Characteristics
Ciss
Input Capacitance
VDS=25V, VGS=0V, f=1MHz
---
420
800
pF
Coss
Output Capacitance
---
65
120
Crss
Reverse Transfer Capacitance
---
40
80
Switching Characteristics
td(on)
Turn-On Delay Time
2,3
VDD=20V , VGS=4.5V ,
RG=25,ID=1A
---
3.2
6
ns
tr
Rise Time
2,3
---
8.6
16
ns
td(off)
Turn-Off Delay Time
2,3
---
18
36
ns
tf
Fall Time
2,3
---
6
12
ns
Qg
Total Gate Charge
2,3
VGS=4.5V, VDS=20V,
ID=5A
---
4.5
10
nC
Qgs
Gate-Source
Charge
2,3
---
1.5
2.4
nC
Qgd
Gate-Drain “Miller” Charge
2,3
---
1.9
5
nC
Drain-Source Diode Characteristics
VSD
Source-Drain Diode Forward Voltage
2
VGS=0V,IS=10A, TJ=25℃
---
---
1
V
UTD454L-TN3-R



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