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UTL1426L-S08-R Datasheet(PDF) 2 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

Part # UTL1426L-S08-R
Description  P-Channel MOSFET uses advanced trench technology
PDF  7 Pages
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Manufacturer  DOINGTER [SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.]
Direct Link  http://www.doingter.cn/
Logo DOINGTER - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

UTL1426L-S08-R Datasheet(HTML) 2 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

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—
2 —
30
℃/ W
Electrical Characteristics：(T
C=25℃ unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain-Sourtce Breakdown Voltage
VGS=0V,ID=250μA
-30
---
V
IDSS
Zero Gate Voltage Drain Current
VGS=0V, VDS=-24V
---
---
-1
μA
VGS=0V, VDS=-24V, TJ=55℃
-5
IGSS
Gate-Source Leakage Current
VGS=±20V, VDS=0A
---
---
±100
nA
On Characteristics
3
VGS(th)
GATE-Source Threshold Voltage
VGS=VDS, ID=-250μA
-1
-1.3
-3
V
ID
80
A
RDS(ON)
Drain-Source On Resistance
VGS=-10V,ID=-15A
---
8.5
12
mΩ
11
16
8
11
---
13
GFS
Forward Transconductance
VDS=-5V, ID=-10A
30
---
S
Dynamic Characteristics
4
Ciss
Input Capacitance
VDS=-15V, VGS=0V, f=1MHz
---
2476
2900
pF
Coss
Output Capacitance
---
523
---
Crss
Reverse Transfer Capacitance
---
325
---
Switching Characteristics
,4
td(on)
Turn-On Delay Time
VDS=-15V, VGS=-10V
RL=1.25Ω,RGEN=3Ω
---
14.4
---
ns
tr
Rise Time
---
11
---
ns
td(off)
Turn-Off Delay Time
---
23.6
---
ns
μA
UTL1426L-S08-R



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