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UTT4407L-S08-R Datasheet(PDF) 1 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

Part # UTT4407L-S08-R
Description  P-Channel MOSFET uses advanced trench technology
PDF  5 Pages
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Manufacturer  DOINGTER [SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.]
Direct Link  http://www.doingter.cn/
Logo DOINGTER - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

UTT4407L-S08-R Datasheet(HTML) 1 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

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Description：
This P-Channel MOSFET uses advanced trench technology and
design to provide excellent RDS(on) with low gate charge.
It can be used in a wide variety of applications.
Features：
1) VDS=-30V,ID=-12A,RDS(ON)<16mΩ@VGS=-10V
2) Low gate charge.
3) Green device available.
4) Advanced high cell denity trench technology for ultra RDS(ON).
5) Excellent package for good heat dissipation.
Absolute Maximum Ratings：(T
C=25℃ unless otherwise noted)
Symbol
Parameter
Ratings
Units
VDS
Drain-Source Voltage
-30
V
VGS
Gate-Source Voltage
±20
V
ID
Continuous Drain Current-TC=25℃
-12
A
Continuous Drain Current-TC=100℃
---
Pulsed Drain Current
1
-48
EAS
Single Pulse Avalanche Energy
---
mJ
PD
Power Dissipation
3
W
TJ, TSTG
Operating and Storage Junction Temperature Range
-55 to +150
℃
Symbol
Parameter
Max
Units
RƟJA
Thermal Resistance,Junction to Ambient
2
41.67
G
D
D
D
D
S1
S
S
℃
/W
Thermal Characteristics：
UTT4407L-S08-R


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