WNSC08650T datasheet(1/11 Pages) WEEN

Part #	WNSC08650T

Description	Silicon Carbide Diode

PDF	11 Pages

Scroll/Zoom	100%

Manufacturer	WEEN [WeEn Semiconductors]

Direct Link	http://www.ween-semi.com

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1 / 11 page

WNSC08650T

Silicon Carbide Diode

Rev.01 - 18 March 2020

Product data sheet

1. General description

Silicon Carbide Schottky diode in a DFN 8*8

plastic package, designed for high frequency

switched-mode power supplies.

2. Features and benefits

3. Applications

• Power factor correction

• Telecom / Server SMPS

• UPS

• PV inverter

• PC Silverbox

• LED / OLED TV

• Motor Drives

4. Quick reference data

Table 1. Quick reference data

Symbol Parameter

Conditions

Values

Unit

Absolute maximum rating

VRRM

repetitive peak reverse

voltage

650

V

IF(AV)

average forward current δ = 0.5 ; square-wave pulse; Tc ≤ 136 °C;

Fig. 1; Fig. 2; Fig. 3

8

A

Tj

junction temperature

175

°C

Symbol Parameter

Conditions

Min

Typ

Max

Unit

Static characteristics

VF

forward voltage

IF = 8 A; Tj = 25 °C; Fig. 5

-

1.5

1.7

V

IF = 8 A; Tj = 150 °C; Fig. 5

-

1.8

2.1

V

Dynamic characteristics

Qr

recovered charge

IF = 8 A; dIF/dt = 500 A/μs; VR = 400 V;

Tj = 25 °C; Fig. 7

-

13

-

nC

• Highly stable switching performance

• High forward surge capability IFSM

• Extremely fast reverse recovery time

• Superior in efficiency to Silicon Diode alternatives

• Reduced losses in associated MOSFET

• Reduced EMI

• Reduced cooling requirements

• RoHS compliant

RoHS

halogen-Free

Lead-Free

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