WNSC08650T datasheet(6/11 Pages) WEEN

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WeEn Semiconductors

WNSC08650T

Silicon Carbide Diode

WNSC08650T

Product data sheet

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18 March 2020

6 / 11

10. Characteristics

Table 7. Characteristics

Symbol Parameter

Conditions

Min

Typ

Max

Unit

Static characteristics

forward current

IF = 8 A; Tj = 25 °C; Fig. 5

1.5

1.7

IF = 8 A; Tj = 150 °C; Fig. 5

1.8

2.1

IF = 8 A; Tj = 175 °C; Fig. 5

1.95

2.25

reverse current

VR = 650 V; Tj = 25 °C; Fig. 6

μA

VR = 650 V; Tj = 175 °C; Fig. 6

200

μA

Dynamic characteristics

recovered charge

IF = 8 A; VR = 400 V; dIF/dt = 500 A/μs;

Tj = 25 °C; Fig. 7

diode capacitance

f = 1 MHz; VR = 1 V; Tj = 25 °C

267

f = 1 MHz; VR = 300 V; Tj = 25 °C

f = 1 MHz; VR = 600 V; Tj = 25 °C

Eas

non-repetitive

avalanche energy

IR = 4.9 A; L = 5 mH; Tj(init) = 25 °C

Vo = 1.108 V; Rs = 0.1198 Ω

(1) Tj = -55 °C; typical values

(2) Tj = 0 °C; typical values

(3) Tj = 25 °C; typical values

(4) Tj = 100 °C; typical values

(5) Tj = 150 °C; typical values

(6) Tj = 175 °C; typical values

Fig. 5. Forward current as a function of forward

voltage; typical values

Fig. 6. Reverse leakage current as a function of reverse

voltage; typical value

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