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ADGS1612BCPZ Datasheet(PDF) 3 Page - Analog Devices

Part # ADGS1612BCPZ
Description  SPI Interface, 1 廓 RON, 짹5 V, 12 V, 5 V, 3.3 V, Mux Configurable, Quad SPST Switch
PDF  29 Pages
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Manufacturer  AD [Analog Devices]
Direct Link  http://www.analog.com
Logo AD - Analog Devices

ADGS1612BCPZ Datasheet(HTML) 3 Page - Analog Devices

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Data Sheet
ADGS1612
Rev. 0 | Page 3 of 29
SPECIFICATIONS
±5 V DUAL SUPPLY
Positive supply (VDD) = 5 V ± 10%, negative supply (VSS) = −5 V ± 10%, digital supply (VL) = 2.7 V to 5.5 V, GND = 0 V, unless otherwise noted.
Table 1.
Parameter
25°C
−40°C to +85°C
−40°C to +125°C
Unit
Test Conditions/Comments
ANALOG SWITCH
Analog Signal Range
VDD to VSS
V
On Resistance, RON
1
Ω typ
VS = ±4.5 V, IS = −10 mA;
see Figure 29
1.2
1.4
1.6
Ω max
VDD = +4.5 V, VSS = −4.5 V
On Resistance Match Between
Channels, ∆RON
0.04
Ω typ
VS = ±4.5 V, IS = −10 mA
0.08
0.09
0.1
Ω max
On Resistance Flatness, RFLAT (ON)
0.23
Ω typ
VS = ±4.5 V, IS = −10 mA
0.28
0.32
0.37
Ω max
LEAKAGE CURRENTS
VDD = +5.5 V, VSS = −5.5 V
Source Off Leakage, IS (Off )
±0.1
nA typ
VS = ±4.5 V, VD =
∓4.5 V; see Figure 32
±0.3
±1.0
±6.0
nA max
Drain Off Leakage, ID (Off )
±0.1
nA typ
VS = ±4.5 V, VD =
∓4.5 V; see Figure 32
±0.3
±1.0
±6.0
nA max
Channel On Leakage, ID (On), IS (On)
±0.2
nA typ
VS = VD = ±4.5 V; see Figure 28
±0.4
±1.5
±10.0
nA max
DIGITAL OUTPUT
Output Voltage
Low, VOL
0.4
V max
ISINK = 5 mA
0.2
V max
ISINK = 1 mA
Output Current, Low (IOL) or High (IOH)
0.001
μA typ
VOUT = VGND or VL
±0.1
μA max
Digital Output Capacitance, COUT
4
pF typ
DIGITAL INPUTS
Input Voltage
High, VINH
2
V min
3.3 V < VL ≤ 5.5 V
1.35
V min
2.7 V ≤ VL ≤ 3.3 V
Low, VINL
0.8
V max
3.3 V < VL ≤ 5.5 V
0.8
V max
2.7 V ≤ VL ≤ 3.3 V
Input Current, Low (IINL) or High (IINH)
0.001
μA typ
VIN = VGND or VL
±0.1
μA max
Digital Input Capacitance, CIN
4
pF typ
DYNAMIC CHARACTERISTICS
On Time, tON
385
ns typ
RL = 300 Ω, CL = 35 pF
480
485
485
ns max
VS = 2.5 V; see Figure 36
Off Time, tOFF
250
ns typ
RL = 300 Ω, CL = 35 pF
305
335
360
ns max
VS = 2.5 V; see Figure 36
Break-Before-Make Time Delay, tD
175
ns typ
RL = 300 Ω, CL = 35 pF
115
ns min
VS1 = VS2 = 2.5 V, see Figure 35
Charge Injection, QINJ
120
pC typ
VS = 0 V, RS = 0 Ω, CL = 1 nF; see
Figure 37
Off Isolation
−65
dB typ
RL = 50 Ω, CL = 5 pF, f = 100 kHz; see
Figure 31
Channel to Channel Crosstalk
−93
dB typ
RL = 50 Ω, CL = 5 pF, f = 1 MHz; see
Figure 30



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